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| SI8902EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 0.045 @ VGS = 4.5 V 20 0.048 @ VGS = 3.7 V 0.057 @ VGS = 2.5 V 0.072 @ VGS = 1.8 V IS1S2 (A) 5.0 4.8 4.4 3.9 D D D D TrenchFETr Power MOSFET Ultra-Low rSS(on) ESD Protected: 4000 V New MICRO FOOTt Chipscale Packaging Reduces Footprint Area, Profile (0.65 mm) and On-Resistance Per Footprint Area APPLICATIONS D Battery Protection Circuit - 1-2 Cell Li+/LiP Battery Pack for Portable Devices S1 MICRO FOOTt Bump Side View Backside View S2 54 S2 Pin 1 Identifier G1 4 kW 8902E xxx G2 63 G1 Device Marking: 8902E = P/N Code xxx = Date/Lot Traceability Code G2 4 kW S1 1 2 S1 S2 N-Channel ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Source1--Source2 Voltage Gate-Source Voltage Continuous Source1--Source2 Current (TJ = 150_C)a _ Pulsed Source1--Source2 Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range Package Reflow Conditionsc VPR IR/Convection TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VS1S2 VGS IS1S2 ISM 5 secs 20 Steady State "12 Unit V 5.0 3.4 8 1.7 3.9 2.8 A 1 0.5 -55 to 150 215 220 _C W PD TJ, Tstg 0.8 THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Footb Steady State Steady State RthJA RthJF Symbol Typical 60 95 18 Maximum 75 120 22 Unit _C/W C/W Notes a. Surface Mounted on 1" x 1" FR4 Board. b. The Foot is defined as the top surface of the package. c. Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering. Document Number: 71862 S-21337--Rev. C, 05-Aug-02 www.vishay.com 1 SI8902EDB Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) IGSS VSS = VGS, ID = 980 mA VSS = 0 V, VGS = "4.5 V Gate-Body Leakage VSS = 0 V, VGS = "12 V VSS = 16 V, VGS = 0 V Zero Gate Voltage Source Current On-State Source Currenta IS1S2 IS(on) VSS = 16 V, VGS = 0 V, TJ = 85_C VSS = 5 V, VGS = 4.5 V VGS = 4.5 V, ISS = 1 A VGS = 3.7 V, ISS = 1 A Source1--Source2 On-State Resistancea rS1S2(on) VGS = 2.5 V, ISS = 1 A VGS = 1.8 V, ISS = 1 A Forward Transconductancea gfs VSS = 10 V, ISS = 1 A 5 0.038 0.041 0.048 0.060 20 0.045 0.048 0.057 0.072 S W 0.45 1.0 "4 "10 1 5 V mA mA mA m A Symbol Test Condition Min Typ Max Unit Dynamicb Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf VSS = 10 V, RL = 10 W ISS ^ 1 A, VGEN = 4.5 V, RG = 6 W 1 3 17 10 1.5 4.5 26 15 ms m Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate-Current vs. Gate-Source Voltage 20 IGSS @ 25_C (mA) I GSS - Gate Current (mA) 16 I GSS - Gate Current (mA) 10,000 Gate Current vs. Gate-Source Voltage 1,000 100 TJ = 150_C 10 12 8 1 TJ = 25_C 0.1 4 0 0 3 6 9 12 15 0.01 0 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 71862 S-21337--Rev. C, 05-Aug-02 2 SI8902EDB New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 VGS = 5 thru 1.5 V 8 I D - Drain Current (A) I D - Drain Current (A) 8 10 Vishay Siliconix Transfer Characteristics 6 6 4 4 TC = 125_C 2 25_C -55 _C 2 1V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.10 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V IS1S2 = 1 A r DS(on) - On-Resistance (W) (Normalized) 10 r DS(on) - On-Resistance ( W ) 0.08 VGS = 1.8 V 0.06 VGS = 2.5 V 0.04 VGS = 3.7 V 0.02 VGS = 4.5 V 1.4 1.2 1.0 0.8 0.00 0 2 4 6 8 0.6 -50 -25 0 25 50 75 100 125 150 ID - Drain Current (A) TJ - Junction Temperature (_C) On-Resistance vs. Gate-to-Source Voltage 0.10 IS1S2 = 5 A r DS(on) - On-Resistance ( W ) 0.08 V GS(th) Variance (V) IS1S2 = 1 A 0.06 0.1 0.2 Threshold Voltage IS1S2 = 980 mA -0.0 -0.1 0.04 -0.2 0.02 -0.3 0.00 0 1 2 3 4 5 -0.4 -50 -25 0 25 50 75 100 125 150 VGS - Gate-to-Source Voltage (V) Document Number: 71862 S-21337--Rev. C, 05-Aug-02 TJ - Temperature (_C) www.vishay.com 3 SI8902EDB Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power, Junction-to-Ambient 30 25 10 Limited by rDS(on) 0.0001 s 0.001 s Safe Operating Area 20 Power (W) I D - Drain Current (A) 1 0.01 s 15 0.1 s 0.1 TC = 25_C Single Pulse 1s 10 s dc 10 5 0 0.01 0.01 0.1 1 Time (sec) 10 100 1000 0.1 1 10 VDS - Drain-to-Source Voltage (V) 100 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 10 100 600 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 95_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 Square Wave Pulse Duration (sec) 10- 1 1 www.vishay.com 4 Document Number: 71862 S-21337--Rev. C, 05-Aug-02 SI8902EDB New Product PACKAGE OUTLINE MICRO FOOT: 6-BUMP (2 X 3, 0.8-mm PITCH) 6 0.30 X 0.31 Note 3 Solder Mask -0.4 Vishay Siliconix Note 2 A2 e b Diameter Bump Note 1 e e A1 A Recommended Land 8902E xxx Mark on Backside of Die s e E NOTES (Unless Otherwise Specified): 1. 2. 3. 4. 6 solder bumps are Eutetic 63Sn/37Pb with diameter 0.37 - 0.41 mm Backside surface is coated with a Ag/Ni/Ti layer Non-solder mask defined copper landing pad. Laser marks on the silicon die back e e D s MILLIMETERS* Dim A A1 A2 b D E e s INCHES Min 0.0236 0.102 0.0134 0.0146 0.0598 0.0913 0.0295 0.0150 Min 0.600 0.260 0.340 0.370 1.520 2.320 0.750 0.380 Max 0.650 0.290 0.360 0.410 1.600 2.400 0.850 0.400 Max 0.0256 0.114 0.0142 0.0161 0.0630 0.0945 0.0335 0.0157 * Use millimeters as the primary measurement. Document Number: 71862 S-21337--Rev. C, 05-Aug-02 www.vishay.com 5 |
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